Typical Characteristics T J = 25°C unless otherwise noted
10
8
6
4
2
I D = 8 A
V DD = 10 V
V DD = 20 V
V DD = 15 V
2000
1000
100
C iss
C oss
f = 1 MHz
V GS = 0 V
C rss
0
0
3
6
9
12
15
10
0.1
1
10
30
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
20
10
T J = 25 o C
10
8
6
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
V GS = 10 V
T J = 100 o C
4
2
V GS = 4.5 V
R θ JA = 78 C/W
T J = 125
o C
o
1
0.001
0.01
0.1
1
10
100
0
25
50
75
100
125
150
T A , AMBIENT TEMPERATURE ( C )
100
t AV , TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
o
Figure 10. Maximum Continous Drain Current
vs. Ambient Temperature
1000
SINGLE PULSE
10
100 us
100
R θ JA = 175 o C/W
T A = 25 o C
1
0.1
THIS AREA IS
LIMITED BY r DS(on)
SINGLE PULSE
T J = MAX RATED
R θ JA = 175 o C/W
1 ms
10 ms
100 ms
1s
10 s
10
1
10
10
10
10
T A = 25 o C
0.01
0.01
0.1
1
10
DC
100
0.1
-4
-3
-2
-1
1
10
100
1000
V DS , DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
?2012 Fairchild Semiconductor Corporation
FDC8878 Rev.C2
4
www.fairchildsemi.com
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